[ODCAD] Blue Color Life of OLED
The industry standard for display device life is 100,000 hrs. LCD and Plasma are two popular FPD technologies. All of them have reached this standard.
Color of OLED can be achieved by three elemental color materials. Each material gives one of the colors Red, Yellow and Blue. There are the other technologies to achieve full color of OLED, which will be covered later.
One of targets of OLED is to increase the life of each color material. This is particularly true for Blue color material. The longest life for this is 45,000 hr (this is my knowledge, you may share with us if you have the latest info). For chemist, material scientist, it is a great job ahead of them.
Wednesday, April 14, 2004
[ODCAD] OLED Simulation Software
OD Software Incorporated develops software (tool kit) for simulating electronic device performance. One product ODCAD plus does particularly focuse on Display Device such as LED, OLED, FLED, PLED. The interesting user may send e-mail to request for more info. (Marketing@odcad.com)
OD Software Incorporated develops software (tool kit) for simulating electronic device performance. One product ODCAD plus does particularly focuse on Display Device such as LED, OLED, FLED, PLED. The interesting user may send e-mail to request for more info. (Marketing@odcad.com)
[ODCAD] Mobility Effect :Junction of Organic Semiconductor, Electrode
The charge carrier mobility is critical information for the simulation (modeling) of electronic devices such as OLED, TFT etc. Its value of organic semiconductor is usually much lower than crystal Si material. This low mobility has impact to the transistor (see "Organic TFT Transistor: Interface and Performance"). Also, it has impact to the electrical behavior of the other device.
For a layered structure device, say a simple three layer DIODE device: bottom electrode, middle semiconductor, top electrode. Assume the bottom junction is ohmic, then the diode is due to the top junction. One popular approximate equation is Schottky junction model. The reversed current J0 measured for the junction is usually 6 order (or higher) less than what the model predicts (see "Reversed Current in Schottky Junction"). What is the reason to cause this?
There are quite few reasons for this. One important effect is due to the slow mobility of the charge carrier. A complete model considering charge injection and charge diffusion is Thermionic Emission-Diffusion model (Sze 2nd Edition). In this model, the mobility effect (drift velocity) is trivial if it is large enough compared with thermal charge carrier velocity. Otherwise, the injected current is proportion to the drift velocity that is the product of mobility and field. Dr. Scott from IBM lab in San Jose, CA) has done a set of experiments and the results have confirmed the mobility effect.
This does tell us that the current can be dependent on the mobility even it is at junction control. For device engineer, he (she) has to design (choose) the material to ensure the current obtained from the device can meet the requirements.
More related articles can be found in Electronic Device Group (click the link on the right top to join the group).
Copy right owned by OD Software Incorporated (ODSI)-the expert and tool kit provider of electronic material, device.
The charge carrier mobility is critical information for the simulation (modeling) of electronic devices such as OLED, TFT etc. Its value of organic semiconductor is usually much lower than crystal Si material. This low mobility has impact to the transistor (see "Organic TFT Transistor: Interface and Performance"). Also, it has impact to the electrical behavior of the other device.
For a layered structure device, say a simple three layer DIODE device: bottom electrode, middle semiconductor, top electrode. Assume the bottom junction is ohmic, then the diode is due to the top junction. One popular approximate equation is Schottky junction model. The reversed current J0 measured for the junction is usually 6 order (or higher) less than what the model predicts (see "Reversed Current in Schottky Junction"). What is the reason to cause this?
There are quite few reasons for this. One important effect is due to the slow mobility of the charge carrier. A complete model considering charge injection and charge diffusion is Thermionic Emission-Diffusion model (Sze 2nd Edition). In this model, the mobility effect (drift velocity) is trivial if it is large enough compared with thermal charge carrier velocity. Otherwise, the injected current is proportion to the drift velocity that is the product of mobility and field. Dr. Scott from IBM lab in San Jose, CA) has done a set of experiments and the results have confirmed the mobility effect.
This does tell us that the current can be dependent on the mobility even it is at junction control. For device engineer, he (she) has to design (choose) the material to ensure the current obtained from the device can meet the requirements.
More related articles can be found in Electronic Device Group (click the link on the right top to join the group).
Copy right owned by OD Software Incorporated (ODSI)-the expert and tool kit provider of electronic material, device.
Thursday, April 08, 2004
[ODCAD] Mobility Effect :Junction of Organic Semiconductor, Electrode
The charge carrier mobility of organic semiconductor is usually much lower than crystal Si material. This low mobility has impact to the transistor (see "Organic TFT Transistor: Interface and Performance"). Also, it has impact to the electrical behavior of the other device.
For a layered structure device, say a simple three layer DIODE device: bottom electrode, middle semiconductor, top electrode. Assume the bottom junction is ohmic, then the diode is due to the top junction. One popular approximate equation is Schottky junction model. The reversed current J0 measured for the junction is usually 6 order (or higher) less than what the model predicts (see "Reversed Current in Schottky Junction"). What is the reason to cause this?
There are quite few reasons for this. One important effect is due to the slow mobility of the charge carrier. A complete model considering charge injection and charge diffusion is Thermionic Emission-Diffusion model (Sze 2nd Edition). In this model, the mobility effect (drift velocity) is trivial if it is large enough compared with thermal charge carrier velocity. Otherwise, the injected current is proportion to the drift velocity that is the product of mobility and field. Dr. Scott from IBM lab in San Jose, CA) has done a set of experiments and the results have confirmed the mobility effect.
This does tell us that the current can be dependent on the mobility even it is at junction control. For device engineer, he (she) has to design (choose) the material to ensure the current obtained from the device can meet the requirements.
Copy right owned by OD Software Incorporated (ODSI)-the expert and tool kit provider of electronic material, device.
The charge carrier mobility of organic semiconductor is usually much lower than crystal Si material. This low mobility has impact to the transistor (see "Organic TFT Transistor: Interface and Performance"). Also, it has impact to the electrical behavior of the other device.
For a layered structure device, say a simple three layer DIODE device: bottom electrode, middle semiconductor, top electrode. Assume the bottom junction is ohmic, then the diode is due to the top junction. One popular approximate equation is Schottky junction model. The reversed current J0 measured for the junction is usually 6 order (or higher) less than what the model predicts (see "Reversed Current in Schottky Junction"). What is the reason to cause this?
There are quite few reasons for this. One important effect is due to the slow mobility of the charge carrier. A complete model considering charge injection and charge diffusion is Thermionic Emission-Diffusion model (Sze 2nd Edition). In this model, the mobility effect (drift velocity) is trivial if it is large enough compared with thermal charge carrier velocity. Otherwise, the injected current is proportion to the drift velocity that is the product of mobility and field. Dr. Scott from IBM lab in San Jose, CA) has done a set of experiments and the results have confirmed the mobility effect.
This does tell us that the current can be dependent on the mobility even it is at junction control. For device engineer, he (she) has to design (choose) the material to ensure the current obtained from the device can meet the requirements.
Copy right owned by OD Software Incorporated (ODSI)-the expert and tool kit provider of electronic material, device.
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